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www.irf.com ? 2010 international rectifier july 1, 2011 ir11682s dual smartrectifier tm driver ic features secondary-side high speed controller for synchronous rectification in resonant half bridge topologies 200v proprietary ic technology max 400khz switching frequency anti-bounce logic and uvlo protection 4a peak turn off drive current micropower start-up & ultra low quiescent current 10.7v gate drive clamp 80ns turn-off propagation delay wide vcc operating range direct sensing for both synchronous rectifiers cycle by cycle mot check circuit prevents multiple false trigger gate pulses minimal component count simple design lead-free typical applications lcd & pdp tv, telecom smps, ac-dc adapters product summary topology llc half-bridge vd 200v v out 10.7v clamped i o+ & i o- (typical) +1a & -4a turn on propagation delay 100ns (typical) turn off propagation delay 80ns (typical) package options 8-lead soic typical connection diagram load sr1 sr2 cdc 1 2 lr c1 c2 rtn vin vd2 5 vs2 6 vs1 3 vcc 2 vd1 4 gnd 7 gate2 8 gate1 1 ir1168 cout rg2 rg1 m1 m2 ir11682 datasheet no C 97476
ir11682s www.irf.com ? 2010 international rectifier 2 table of contents page description 3 qualification information 4 absolute maximum ratings 5 electrical characteristics 6 functional block diagram 8 input/output pin equivalent circuit diagram 9 lead definitions 10 lead assignments 10 application information and additional details 12 package details 19 tape and reel details 20 part marking information 21 ordering information 22
ir11682s www.irf.com ? 2010 international rectifier 3 description ir11682 is a dual smart secondary-side rectifier dr iver ic designed to drive two n-channel power mosfe ts used as synchronous rectifiers in resonant converte r applications. the ic can control one or more para lleled n mosfets to emulate the behavior of schottky diode r ectifiers. the drain to source for each rectifier m osfet voltage is sensed differentially to determine the l evel of the current and the power switch is turned on and off in close proximity of the zero current transiti on. the anti shoot-through logic prevents both chan nels from turning on the power switches at the same time. the cycle-by-cycle mot protection circuit can automati cally detect no load condition and turn off gate driver o utput to avoid negative current flowing through the mosfets. ruggedness and noise immunity are accompli shed using an advanced blanking scheme and double-pulse suppression that allows reliable opera tion in fixed and variable frequency applications.
ir11682s www.irf.com ? 2010 international rectifier 4 qualification information ? qualification level industrial ?? comments: this family of ics has passed jedecs industrial qualification. irs consumer qualificat ion level is granted by extension of the higher industrial level . moisture sensitivity level soic8n msl2 ??? 260c (per ipc/jedec j-std-020) esd machine model class b (per jedec standard jesd22-a115) human body model class 2 (per eia/jedec standard eia/jesd22-a114) ic latch-up test class 1, level a (per jesd78) rohs compliant yes ? qualification standards can be found at internation al rectifiers web site http://www.irf.com/ ?? higher qualification ratings may be available shoul d the user have such requirements. please contact your international rectifier sales representative f or further information. ??? higher msl ratings may be available for the specifi c package types listed here. please contact your international rectifier sales representative for fu rther information.
ir11682s www.irf.com ? 2010 international rectifier 5 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all v oltage parameters are absolute voltages referenced to com, all currents are defined positive into any lead. the thermal resistance and power dissipation ratings ar e measured under board mounted and still air condit ions. parameters symbol min. max. units remarks supply voltage v cc -0.3 20 v cont. drain sense voltage v d -1 200 v pulse drain sense voltage v d -5 200 v source sense voltage v s -3 20 v gate voltage v gate -0.3 20 v v cc =20v, gate off operating junction temperature t j -40 150 c storage temperature t s -55 150 c thermal resistance r q ja 128 c/w soic-8 package power dissipation p d 970 mw soic-8, t amb =25c switching frequency fsw 400 khz recommended operating conditions for proper operation the device should be used with in the recommended conditions. symbol definition min. max. units v cc supply voltage 8.6 18 v v d 1, v d2 drain sense voltage -3 ? 200 t j junction temperature -25 125 c fsw switching frequency --- 400 khz ? v d1, v d2 -3v negative spike width 100ns
ir11682s www.irf.com ? 2010 international rectifier 6 electrical characteristics vcc=15v and t a = 25c unless otherwise specified. the output volt age and current (v o and i o ) parameters are referenced to gnd (pin7). supply section parameters symbol min. typ. max. units remarks supply voltage operating range v cc 8.6 18 v gbd v cc turn on threshold v cc on 7.5 8.1 8.5 v v cc turn off threshold v cc uvlo 7 7.6 8 v (under voltage lock out) v cc turn on/off hysteresis v cc hyst 0.5 v operating current i cc 14 18 ma c load =1nf, f sw = 400khz 48 60 ma c load =4.7nf, f sw = 400khz quiescent current i qcc 2.6 4.3 ma start-up current i cc start 140 a v cc =v cc on - 0.1v comparator section parameters symbol min. typ. max. units remarks turn-off threshold v th1 -12 -6 0 mv turn-on threshold v th2 -220 -140 -80 mv hysteresis v hyst 141 mv input bias current i ibias1 1 10 a v d = -50mv input bias current i ibias2 10 50 a v d = 200v comparator input offset v offset 2 mv gbd one-shot section parameters symbol min. typ. max. units remarks blanking pulse duration t blank 8 17 25 s reset threshold v th3 2.5 v v cc =10v C gbd 5.4 v v cc =20v C gbd hysteresis v hyst3 40 mv v cc =10v C gbd minimum on time section parameters symbol min. typ. max. units remarks minimum on time t o n min 600 850 1100 ns
ir11682s www.irf.com ? 2010 international rectifier 7 electrical characteristics vcc=15v and t a = 25c unless otherwise specified. the output volt age and current (v o and i o ) parameters are referenced to gnd (pin7). gate driver section parameters symbol min. typ. max. units remarks gate low voltage v glo 0.3 0.5 v i gate = 200ma gate high voltage v gth 8.5 10.7 13.5 v v cc =12v-18v (internally clamped) rise time t r1 10 ns c load = 1nf t r2 80 ns c load = 4.7nf fall time t f1 5 ns c load = 1nf t f2 25 ns c load = 4.7nf turn on propagation delay t don 100 200 ns v ds to v gate -100mv overdrive turn off propagation delay t doff 80 120 ns v ds to v gate -100mv overdrive pull up resistance r up 5 w i gate = 15ma C gbd pull down resistance r down 1.2 w i gate = -200ma C gbd output peak current (source) i o source 1 a c load = 1nf C gbd output peak current (sink) i o sink 4 a c load = 1nf C gbd
ir11682s www.irf.com ? 2010 international rectifier 8 functional block diagram
ir11682s www.irf.com ? 2010 international rectifier 9 i/o pin equivalent circuit diagram
ir11682s www.irf.com ? 2010 international rectifier 10 lead definitions pin# symbol description 1 gate1 gate drive output 1 2 vcc supply voltage 3 vs1 sync fet 1 source voltage sense 4 vd1 sync fet 1 drain voltage sense 5 vd2 sync fet 2 drain voltage sense 6 vs2 sync fet 2 source voltage sense 7 gnd analog and power ground 8 gate2 gate drive output 2 lead assignments 4 3 2 1 5 6 7 8 vd2 vd1 gnd gate2 vcc vs1 vs2 gate1
ir11682s www.irf.com ? 2010 international rectifier 11 detailed pin description vcc: power supply this is the supply voltage pin of the ic and it is monitored by the under voltage lockout circuit. it is possible to turn off the ic by pulling this pin below the minim um turn off threshold voltage, without damage to th e ic. to prevent noise problems, a bypass ceramic capacit or connected to vcc and com should be placed as close as possible to the ir11682. this pin is not i nternally clamped. gnd: ground this is ground potential pin of the integrated cont rol circuit. the internal devices and gate driver are referenced to this point. vd1 and vd2: drain voltage sense these are the two high-voltage pins used to sense t he drain voltage of the two sr power mosfets. rout ing between the drain of the mosfet and the ic pin must be particularly optimized. additional rc filter in not necessary but could be added to vd1 and vd2 pins to increase noise immunit y. for applications which vd voltage exceeds 100v, a 1 kohm to 2kohm vd resistor is recommended to be added between the drain of sr mosfet and vd pin. th e vd resistor helps to limit the switching loss of vd pins. vs1 and vs2: source voltage sense these are the two differential sense pins for the t wo source pins of the two sr power mosfets. this pi n must not be connected directly to the gnd pin (pin 7) but must be used to create a kelvin contact as c lose as possible to the power mosfet source pin. gate1 and gate2: gate drive outputs these are the two gate drive outputs of the ic. th e gate voltage is internally clamped and has a +1a/ -4a peak drive capability. although this pin can be dir ectly connected to the synchronous rectifier (sr) m osfet gate, the use of gate resistor is recommended (spec ifically when putting multiple mosfets in parallel) . care must be taken in order to keep the gate loop as sho rt and as small as possible in order to achieve opt imal switching performance.
ir11682s www.irf.com ? 2010 international rectifier 12 application information and additional details state diagram power on gateinactive uvlomode vcc vccon & v ds >v th3 vcc < vccuvlo mot protection mode gateoutputdisabled v ds >v th1 @ mot v ds ir11682s www.irf.com ? 2010 international rectifier 13 general description the ir11682 dual smart rectifier controller ic is t he industry first dedicated high-voltage controller ic for synchronous rectification in resonant converter app lications. the ic can emulate the operation of the two secondary rectifier diodes by correctly driving the synchronous rectifier (sr) mosfets in the two seco ndary legs. the core of this device are two high-voltage, high speed comparators which sense the drain to source v oltage of the mosfets differentially. the device current i s sensed using the r dson as a shunt resistance and the gate pin of the mosfet is driven accordingly. dedic ated internal logic then manages to turn the power device on and off in close proximity of the zero cu rrent transition. ir11682 further simplifies synchronous rectifier co ntrol by offering the following power management fe atures: -wide vcc operating range allows the ic to be direc tly powered from the converter output -shoot through protection logic that prevents both the gate outputs from the ic to be high at the same time -device turn on and off in close proximity of the z ero current transition with low turn-on and turn-of f propagation delays; eliminates reactive power flow between the output capacitors and power transformer -internally clamped gate driver outputs that signif icantly reduce gate losses. the smartrectifier? control technique is based on s ensing the voltage across the mosfet and comparing it with two negative thresholds to determine the turn on and off transitions for the device. the rectifie r current is sensed by the input comparators using the power mos fet r dson as a shunt resistance and its gate is driven depending on the level of the sensed voltage vs. the 3 thresholds shown below. v gate v th1 v th2 v th3 v ds figure 1: input comparator thresholds turn-on phase when the conduction phase of the sr fet is initiate d, current will start flowing through its body diod e, generating a negative v ds voltage across it. the body diode has generally a much higher voltage drop than the one caused by the mosfet on resistance and therefor e will trigger the turn-on threshold v th2 . when v th2 is triggered, ir11682 will drive the gate of mosfe t on which will in turn cause the conduction voltage vds to drop down to i d *r dson . this drop is usually accompanied by some amount o f ringing, that could trigger the input comparator to turn off; he nce, a fixed minimum on time (mot) blanking period is used that will maintain the power mosfet on for a minimu m amount of time. the fixed mot limits the minimum conduction time of the secondary rectifiers and hence, the maximum switching frequency of the converter.
ir11682s www.irf.com ? 2010 international rectifier 14 turn-off phase once the sr mosfet has been turned on, it will rema in on until the rectified current will decay to the level where v ds will cross the turn-off threshold v th1 . since the device currents are sinusoidal here, the device vds will cross the v th1 threshold with a relatively low dv/dt. once the threshold is crossed, the current w ill start flowing again through the body diode, cau sing the vds voltage to jump negative. depending on the amou nt of residual current, vds may once again trigger the turn-on threshold; hence, vth2 is blanked for a tim e duration t blank after vth1 is triggered. when the device vds crosses the positive reset threshold vth3, t blank is terminated and the ic is ready for next conduct ion cycle as shown below. gatedrive v ds blanking time t1 t2 v th1 v th2 v th3 mot t blank i ds figure 2: secondary currents and voltages mot protection at very light load or no load condition, the curren t in sr fet will become discontinuous and could be shorter than mot time in some system. if this happens, the sr fet current will flow from drain to source at th e end of mot. the reverse current discharges output capac itor; stores the energy in transformer and causes resonant on vds voltage once the sr fet turns off. the resonant could turn on the gate of ir11682, cau sed more reverse current and thus subsequent multi fals e triggering as shown below in figure 3. figure 3: waveform without mot protection the cycle-by-cycle mot protection circuit can detec t the reverse current situation and disable the nex t output gate pulse to avoid this issue. the internal compar ator and mot pulse generator still work under the protection mode. so the circuit can continuously mo nitor the load current and come back to normal work ing mode once the load current conduction time increase d to longer than mot. this circuit helps to reduce standby power losses. it also can prevent voltage s pike that caused by false triggering at light load.
ir11682s www.irf.com ? 2010 international rectifier 15 figure 4: waveform under mot protection mode general timing waveform t vcc vcc on uvlo vcc uvlo normal uvlo figure 5: vcc uvlo 10% 90% t rise v th2 t fall v th1 t doff t don 50% v ds v gate figure 6: timing waveform
ir11682s www.irf.com ? 2010 international rectifier 16 0.01 0.1 1 10 5.0 v 7.5 v 10.0 v 12.5 v 15.0 v 17.5 v i supply (ma) supply voltage figure 7: supply current vs. supply voltage 7.0 v 7.5 v 8.0 v 8.5 v 9.0 v -50 c 0 c 50 c 100 c 150 c vcc uvlo thresholds temperature vcc on vcc uvlo figure 8: undervoltage lockout vs. temperature 2.2 2.3 2.3 2.4 2.4 2.5 2.5 2.6 2.6 2.7 -50 c 0 c 50 c 100 c 150 c i cc supply current (ma) temperature i qcc figure 9: icc quiescent currrent vs. temperature 13.3 13.4 13.4 13.5 13.5 13.6 13.6 13.7 13.7 13.8 -50 c 0 c 50 c 100 c 150 c i cc supply current (ma) temperature icc @400khz, c load =1nf figure 10: icc supply currrent @1nf load vs. temperature
ir11682s www.irf.com ? 2010 international rectifier 17 -4.8 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -50 c 0 c 50 c 100 c 150 c v th1 threshold (mv) temperature ch2 ch1 figure 11: v th1 vs. temperature -145.0 -144.0 -143.0 -142.0 -141.0 -140.0 -139.0 -138.0 -50 c 0 c 50 c 100 c 150 c v th2 thresholds (mv) temperature ch2 ch1 figure 12: v th2 vs. temperature -141.0 -140.0 -139.0 -138.0 -137.0 -136.0 -135.0 -134.0 -50 c 0 c 50 c 100 c 150 c comparator hysteresis v hyst (mv) temperature ch2 ch1 figure 13: comparator hysteresis vs. temperature 820 ns 830 ns 840 ns 850 ns 860 ns 870 ns 880 ns 890 ns 900 ns -50 c 0 c 50 c 100 c 150 c minimum on time temperature mot_ch1 mot_ch2 figure 14: mot vs temperature
ir11682s www.irf.com ? 2010 international rectifier 18 90 ns 95 ns 100 ns 105 ns 110 ns 115 ns 120 ns 125 ns -50 c 0 c 50 c 100 c 150 c propagation delay temperature ch1 turn-on propagation delay ch2 turn-on propagation delay figure 15: turn-on propagation delay vs. temperature 70 ns 75 ns 80 ns 85 ns 90 ns 95 ns -50 c 0 c 50 c 100 c 150 c propagation delay temperature ch1 turn-off propagation delay ch2 turn-off propagation delay figure 16: turn-off propagation delay vs. temperature 10.0 v 10.5 v 11.0 v 11.5 v -50 c 0 c 50 c 100 c 150 c gate clamping voltage temperature ch1 vgh@vcc=12v ch2 vgh@vcc=12v ch1 vgh@vcc=18v ch2 vgh@vcc=18v figure 17: gate clamping voltage vs. temperature 5 ns 6 ns 6 ns 7 ns 7 ns 8 ns 8 ns 9 ns 9 ns 10 ns -50 c 0 c 50 c 100 c 150 c gate tr and tf @ 1nf load temperature tr_ch1 tr_ch2 tf_ch1 tf_ch2 figure 18: gate output tr and tf time @ 1nf load vs. temperature
ir11682s www.irf.com ? 2010 international rectifier 19 package details: soic8n
ir11682s www.irf.com ? 2010 international rectifier 20 tape and reel details: soic8n e f a c d g a b h note : controlling dim ension in m m loaded tape feed direction a h f e g d b c carrier tape dimension for 8soicn code min max min max a 7.90 8.10 0.311 0.318 b 3.90 4.10 0.153 0.161 c 11.70 12.30 0.46 0.484 d 5.45 5.55 0.214 0.218 e 6.30 6.50 0.248 0.255 f 5.10 5.30 0.200 0.208 g 1.50 n/a 0.059 n/a h 1.50 1.60 0.059 0.062 metric imperial reel dimensions for 8soicn code min max min max a 329.60 330.25 12.976 13.001 b 20.95 21.45 0.824 0.844 c 12.80 13.20 0.503 0.519 d 1.95 2.45 0.767 0.096 e 98.00 102.00 3.858 4.015 f n/a 18.40 n/a 0.724 g 14.50 17.10 0.570 0.673 h 12.40 14.40 0.488 0.566 metric imperial
ir11682s www.irf.com ? 2010 international rectifier 21 part marking information
ir11682s www.irf.com ? 2010 international rectifier 22 ordering information base part number package type standard pack complete part number form quantity ir11682 soic8n tube/bulk 95 ir11682spbf tape and reel 2500 IR11682STRPBF the information provided in this document is believ ed to be accurate and reliable. however, internatio nal rectifier assumes no responsibility for the consequences of the use of t his information. international rectifier assumes n o responsibility for any infringement of patents or of other rights of third parties which may result from the use of this info rmation. no license is granted by implication or otherwise under any patent or patent rights of international rectifier. the specificat ions mentioned in this document are subject to change without notice. this document su persedes and replaces all information previously su pplied. for technical support, please contact irs technica l assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105

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